Infineon IRFR220NTRLPBF: N-Channel MOSFET Datasheet, Application Circuit, and Pinout Configuration
The Infineon IRFR220NTRLPBF is a popular N-Channel HEXFET Power MOSFET designed to deliver high efficiency and reliability in a wide range of power management applications. Encased in a compact D-Pak (TO-252-2) package, this surface-mount device is engineered for low on-state resistance and fast switching speeds, making it an excellent choice for DC-DC converters, motor control circuits, and power supply units.
Key Datasheet Specifications and Features
A thorough review of the datasheet reveals the core electrical characteristics that define this component's performance. It boasts a drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 4.3A at a case temperature of 25°C. A critical feature for efficiency is its exceptionally low on-state resistance (RDS(on)) of just 160mΩ at 10V gate drive (VGS). This low RDS(on) minimizes conduction losses, leading to cooler operation and higher overall system efficiency. The device is also characterized by its fast switching capabilities, which help reduce switching losses in high-frequency circuits.
Pinout Configuration
The pinout for the IRFR220NTRLPBF in its standard D-Pak package is straightforward:
1. Gate (G): This is the control pin. A voltage applied between the Gate and Source terminals creates an electric field that allows current to flow between the Drain and Source.
2. Drain (D): This pin is connected to the internal MOSFET's drain and is typically the load connection point. It is electrically connected to the large tab of the package.
3. Source (S): This pin is connected to the internal MOSFET's source and serves as the common or ground reference for the gate control signal.
Typical Application Circuit: A Simple Switch
One of the most fundamental applications for this MOSFET is as a low-side switch. In this configuration, the load (e.g., a motor, lamp, or relay) is connected between the positive supply rail (VDD) and the MOSFET's Drain pin. The Source pin is connected directly to ground. A microcontroller or logic gate provides the control signal to the Gate pin through a gate resistor (e.g., 10Ω to 100Ω), which dampens ringing caused by parasitic inductance. A pull-down resistor (e.g., 10kΩ) is often used between the Gate and Source to ensure the MOSFET remains firmly off when no active drive signal is present, preventing false triggering. For inductive loads, such as motors, a flyback diode is critical and is placed in reverse bias across the load to protect the MOSFET from voltage spikes generated when the current is suddenly interrupted.
ICGOODFIND Summary
The Infineon IRFR220NTRLPBF stands out as a robust and highly efficient N-Channel MOSFET ideal for a multitude of power switching tasks. Its defining strengths include a high voltage rating of 200V, a very low on-state resistance, and a compact surface-mount package. These attributes make it exceptionally well-suited for designing efficient power conversion systems, motor drivers, and load switches where minimizing power loss and managing heat are paramount.
Keywords: Power MOSFET, Low On-State Resistance, Fast Switching, DC-DC Converter, Motor Control.
