Infineon IRF40R207: A High-Performance 40V Dual N-Channel Power MOSFET in a Single Package
In the pursuit of higher power density and more efficient circuit designs, the integration of multiple components into a single package has become a critical engineering strategy. Addressing this need, the Infineon IRF40R207 stands out as a premier solution, combining two high-performance N-channel MOSFETs in a single compact package. This device is engineered with a 40V drain-source voltage rating, making it an ideal choice for a wide array of automotive, industrial, and consumer applications where space and reliability are paramount.
The hallmark of the IRF40R207 is its exceptional low on-state resistance (RDS(on)), which is typically measured at a mere 1.8 mΩ at 10 V. This ultra-low resistance is a key contributor to minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. By operating cooler, the device enhances overall system reliability and can often lead to a simplification of the thermal management requirements, saving both space and cost.
Housed in the space-saving PQFN 5x6 mm package, this dual MOSFET configuration is optimized for high-current switching. The package itself is designed for excellent thermal performance, featuring an exposed pad that allows for efficient heat dissipation directly to the PCB. This makes the component exceptionally suited for high-power-density designs such as DC-DC converters in advanced computing systems, motor control circuits in automotive subsystems, and load switches in power management units.
Furthermore, the IRF40R207 is characterized by its robust and fast switching performance. The low gate charge (Qg) and optimized internal structure ensure minimal switching losses, which is crucial for high-frequency operation in modern switch-mode power supplies (SMPS). This combination of low RDS(on) and excellent dynamic behavior provides designers with the flexibility to push the boundaries of frequency and efficiency without compromising on thermal performance.
From an application perspective, this dual MOSFET is particularly valuable in synchronous rectification topologies. Having both MOSFETs in a single package simplifies PCB layout, reduces parasitic inductance, and ensures better matching of the switching characteristics between the control and synchronous FETs—a critical factor for maximizing efficiency in buck converters and other synchronous architectures.
ICGOOODFIND: The Infineon IRF40R207 successfully integrates two high-efficiency 40V MOSFETs into a single package, offering engineers a powerful tool to achieve superior power density, reduce losses, and simplify thermal management. Its outstanding blend of ultra-low RDS(on), excellent switching characteristics, and a thermally enhanced package makes it a top-tier choice for next-generation power design challenges.
Keywords: Power MOSFET, Synchronous Rectification, Low RDS(on), Power Density, Thermal Performance.
