Infineon BSZ088N03MSG 30V N-Channel MOSFET for High-Efficiency Power Management

The demand for higher power efficiency and thermal performance continues to drive innovation in power management systems. The Infineon BSZ088N03MSG, a 30V N-Channel MOSFET, stands out as a critical component designed to meet these challenges in modern applications such as DC-DC converters, motor control, and load switching.

Built using Infineon’s advanced OptiMOS™ technology, this MOSFET delivers exceptionally low on-state resistance (RDS(on)) of just 0.95 mΩ (max) at 10 V, significantly reducing conduction losses. This feature is essential for improving system efficiency, particularly in high-current scenarios. The device also offers minimal gate charge (Qg), which allows for faster switching speeds and lower driving losses—a key advantage in high-frequency switching power supplies.

Thermal performance is another critical strength. The BSZ088N03MSG is housed in a SuperSO8 package that provides superior heat dissipation and power density in a compact form factor. This makes it suitable for space-constrained applications like server power supplies, telecom modules, and automotive systems where both reliability and miniaturization are required.

Moreover, the MOSFET’s 30V drain-source voltage rating ensures robust operation in low-voltage environments, while its high current handling capability (up to 100A) makes it adaptable to a variety of demanding conditions. Engineers can leverage these characteristics to design systems that achieve higher efficiency, reduced heat generation, and longer operational life.

ICGOOODFIND:

The Infineon BSZ088N03MSG sets a high standard for performance in power management with its ultra-low RDS(on), optimized switching characteristics, and excellent thermal behavior—making it an ideal choice for next-generation high-efficiency applications.

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Keywords:

Power Management, Low RDS(on), OptiMOS™, High Efficiency, Thermal Performance