Infineon BSZ065N03LSATMA1 30V N-Channel MOSFET Datasheet and Application Notes
The Infineon BSZ065N03LSATMA1 is a state-of-the-art N-Channel MOSFET engineered using Infineon’s advanced OptiMOS™ low-voltage technology. This power MOSFET is designed to deliver exceptional performance in a compact package, making it an ideal choice for a wide range of power management applications. With a drain-source voltage (VDS) rating of 30 V and a continuous drain current (ID) of 25 A at 25°C, this component excels in providing high efficiency and reliability in demanding circuits.
A key highlight of the BSZ065N03LSATMA1 is its remarkably low on-resistance (RDS(on)), which is typically just 1.65 mΩ at 10 V gate-source voltage. This low resistance minimizes conduction losses, leading to higher system efficiency and reduced heat generation. Such characteristics are critical in applications like synchronous rectification in switched-mode power supplies (SMPS), battery management systems, and motor control circuits, where energy efficiency and thermal performance are paramount.
The device is housed in a SuperSO8 package, which offers an excellent balance between compact size and effective thermal and electrical properties. This package is designed for low parasitic inductance and resistance, further supporting high switching performance. Additionally, the MOSFET features a low gate charge (Qg) and fast switching speeds, enabling efficient operation at high frequencies—a necessity for modern power electronics that require compact size and high power density.
From the datasheet, it is important to note the device’s robustness and safety features, including specified avalanche ruggedness and a body diode with good reverse recovery characteristics. These traits ensure reliable operation under transient voltage conditions and in inductive load environments.
When applying the BSZ065N03LSATMA1, special attention should be paid to PCB layout to minimize stray inductance, especially in high-current paths. Proper gate driving is also essential; a dedicated gate driver IC is recommended to ensure sharp switching edges and avoid excessive ringing. Thermal management must not be overlooked—although the SuperSO8 package has good thermal properties, adequate copper area or heatsinking might be necessary for high-current applications to maintain junction temperature within safe limits.
ICGOOODFIND: The Infineon BSZ065N03LSATMA1 stands out as a highly efficient and compact power solution, optimized for low-voltage, high-current applications where minimizing losses and maximizing power density are critical.
Keywords:
OptiMOS™, Low RDS(on), Synchronous Rectification, SuperSO8, Power Management
