Infineon IPB072N15N3 G5: High-Performance 150V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon IPB072N15N3 G5, a 150V N-channel power MOSFET from the esteemed OptiMOS™ 5 technology family, stands out as a premier solution engineered to meet these demanding requirements. This device encapsulates the latest advancements in semiconductor design, offering system designers a powerful component to push the boundaries of performance in a wide array of applications.

Unmatched Efficiency and Power Density

A cornerstone of the OptiMOS™ 5 platform is its exceptional reduction in switching and conduction losses. The IPB072N15N3 G5 boasts an extremely low typical on-state resistance (RDS(on)) of just 7.2 mΩ at 10 V. This minimized resistance directly translates to lower conduction losses, enabling higher efficiency operation. This is particularly critical in high-current applications where even marginal losses can lead to significant heat generation and energy waste. Furthermore, the device features superior switching performance, allowing for higher switching frequencies. This capability enables the design of smaller, more compact magnetic components (inductors and transformers) and filters, significantly increasing the overall power density of the end system.

Robustness and Reliability for Demanding Environments

Beyond raw performance, the IPB072N15N3 G5 is built to last. It offers a high maximum current rating of 72A, ensuring ample headroom for handling surge currents and heavy loads. The 150V voltage rating provides a comfortable safety margin in 48V bus systems, common in telecommunications and data center infrastructure, enhancing system robustness against voltage spikes and transients. The product is also characterized by its high body diode robustness, which is crucial for operation in half-bridge and full-bridge topologies, ensuring safe commutation and reverse recovery.

Optimized Package and Application Versatility

Housed in an TOLL (TO-Leadless) package, this MOSFET offers the best of both worlds: the superior thermal and electrical performance of a leadless design and the mechanical stability of a surface-mount package. The package features an exposed top side for optimal dual-side cooling, dramatically improving thermal management by allowing heat to be dissipated through both the PCB and a top-side heatsink if required. This makes the IPB072N15N3 G5 an ideal choice for a multitude of demanding applications, including:

Server & Telecom SMPS: High-efficiency, high-density power supplies.

OR-ing & Hot-Swap Circuits: Where low RDS(on) is critical for minimizing voltage drop and power loss.

Motor Control & Drives: Providing efficient and reliable switching for brushless DC motors.

Solar Inverters and Energy Storage Systems: Contributing to higher overall system efficiency.

ICGOO

The Infineon IPB072N15N3 G5 is more than just a MOSFET; it is a testament to the evolution of power semiconductor technology. By delivering a combination of ultra-low on-resistance, fast switching speed, and excellent thermal performance in a compact package, it empowers engineers to create the next generation of efficient, powerful, and compact electronic systems. It stands as a top-tier choice for designers who refuse to compromise on performance.

Keywords: OptiMOS 5, Low RDS(on), High Power Density, TOLL Package, 150V MOSFET