Microchip TN2540N8-G: High-Voltage N-Channel MOSFET for Power Switching Applications

Release date:2026-01-15 Number of clicks:138

Microchip TN2540N8-G: High-Voltage N-Channel MOSFET for Power Switching Applications

In the realm of power electronics, the demand for efficient, robust, and reliable switching components is ever-present. Addressing this need, the TN2540N8-G from Microchip Technology stands out as a high-performance N-Channel MOSFET engineered specifically for high-voltage power switching applications. This device is a critical enabler in systems where managing substantial power levels with precision and minimal loss is paramount.

Constructed using advanced proprietary technology, the TN2540N8-G is designed to handle drain-to-source voltages (VDS) of up to 400V, making it exceptionally suitable for a wide array of high-voltage circuits. Its standout feature is an impressively low on-resistance (RDS(on)) of just 0.25Ω (max) at 10V VGS. This low resistance is a key determinant of efficiency, as it directly translates to reduced conduction losses when the device is in its fully on state. Lower losses mean less heat generation, which enhances overall system reliability and can often simplify thermal management designs.

The MOSFET's capability to handle a continuous drain current (ID) of up to 13A further underscores its potency in power-dense environments. This current rating, combined with its high voltage tolerance, makes it an ideal choice for applications such as switch-mode power supplies (SMPS), power factor correction (PFC) stages, motor control circuits, and high-voltage DC-DC converters. The device is offered in the industry-standard TO-220 package, which provides a robust physical form factor and excellent thermal characteristics, allowing for easy mounting to heatsinks for effective heat dissipation.

Furthermore, the TN2540N8-G is characterized by its fast switching speeds, which are crucial for high-frequency switching operations. Minimizing switching losses is essential for achieving high efficiency in modern power supplies, and this MOSFET is designed to offer a optimal balance between switching performance and ruggedness. Its avalanche energy rating also ensures it can withstand unexpected voltage spikes and stressful inductive load conditions, a common requirement in real-world applications, thereby improving system robustness.

ICGOOFind: The Microchip TN2540N8-G is a high-voltage power MOSFET that excels in efficiency and reliability for demanding switching tasks. Its defining attributes are its high 400V voltage rating, exceptionally low on-resistance, and high current handling capability, all housed in a thermally efficient TO-220 package. It is a superior component for designers aiming to maximize performance in AC-DC converters, motor drives, and industrial power systems.

Keywords: High-Voltage MOSFET, Low On-Resistance, Power Switching, TO-220 Package, Avalanche Rated.

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